DocumentCode
2572098
Title
Numerical study of smart pressure sensors: the piezoMOS effect
Author
Manook, R. ; Udrea, F.
Author_Institution
Dept. of Eng., Cambridge Univ., UK
Volume
2
fYear
2002
fDate
2002
Firstpage
321
Abstract
This paper details the investigation into the piezoMOS effect and its possible use in a smart pressure sensor. Use of the ISE TCAD simulation packages for mechanical modelling (SOLIDIS) and semiconductor modelling (DESSIS) has made this investigation possible. Two different pressure membrane thicknesses are examined, upon which fully and partially depleted MOSFETs are modelled.
Keywords
MOSFET; intelligent sensors; pressure sensors; semiconductor device models; DESSIS; ISE TCAD simulation packages; SOLIDIS; fully depleted MOSFETs; mechanical modelling; partially depleted MOSFETs; piezoMOS effect; pressure membrane thicknesses; semiconductor modelling; smart pressure sensors; Biomembranes; Conductivity; Conductors; Intelligent sensors; MOSFETs; Piezoresistance; Piezoresistive devices; Silicon; Solid modeling; Stress;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN
0-7803-7440-1
Type
conf
DOI
10.1109/SMICND.2002.1105859
Filename
1105859
Link To Document