Title :
Numerical study of smart pressure sensors: the piezoMOS effect
Author :
Manook, R. ; Udrea, F.
Author_Institution :
Dept. of Eng., Cambridge Univ., UK
Abstract :
This paper details the investigation into the piezoMOS effect and its possible use in a smart pressure sensor. Use of the ISE TCAD simulation packages for mechanical modelling (SOLIDIS) and semiconductor modelling (DESSIS) has made this investigation possible. Two different pressure membrane thicknesses are examined, upon which fully and partially depleted MOSFETs are modelled.
Keywords :
MOSFET; intelligent sensors; pressure sensors; semiconductor device models; DESSIS; ISE TCAD simulation packages; SOLIDIS; fully depleted MOSFETs; mechanical modelling; partially depleted MOSFETs; piezoMOS effect; pressure membrane thicknesses; semiconductor modelling; smart pressure sensors; Biomembranes; Conductivity; Conductors; Intelligent sensors; MOSFETs; Piezoresistance; Piezoresistive devices; Silicon; Solid modeling; Stress;
Conference_Titel :
Semiconductor Conference, 2002. CAS 2002 Proceedings. International
Print_ISBN :
0-7803-7440-1
DOI :
10.1109/SMICND.2002.1105859
