Title :
Quasi-3D device simulation for microwave noise characterization of MOS devices
Author :
Yi Lin ; Lan Wang ; Obrecht, R. ; Manku, T.
Author_Institution :
Dept. of Electr. & Comput. Eng., Waterloo Univ., Ont., Canada
Abstract :
We report a quasi 3-D MOS noise simulation method which accurately predicts the microwave noise performance of MOS transistors. This method inherently takes into account all the microscopic noise sources within the transistor at microwave frequencies. A 0.5 /spl mu/m LDD nMOS transistor was simulated and the simulation results were compared to measurement data. The behavior of the microwave noise parameters (i.e. F/sub min/, R/sub opt/, X/sub opt/, and R/sub n/) with bias and layout parameters are also presented.
Keywords :
MOSFET; microwave field effect transistors; semiconductor device models; semiconductor device noise; simulation; 0.5 micron; LDD nMOS transistor; MOS device simulation; MOS transistors; bias parameters; layout parameters; microwave noise characterization; quasi-3D device simulation; CMOS technology; Circuit noise; Circuit simulation; Computational modeling; MOS devices; MOSFET circuits; Microwave devices; Noise level; Predictive models; Radio frequency;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746280
