Physics-based RF noise modeling of submicron MOSFETs

Author

Donati, S. ; Alam, M.A. ; Krisch, K.S. ; Martin, S. ; Pinto, M.R. ; Vuong, H.H. ; Bonani, F. ; Ghione, G.

Author_Institution

Bell Lab., Lucent Technol, Murray Hill, NJ, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

81

Lastpage

84

Abstract

The Impedance Field Method (IFM) for physics-based noise modeling of electron devices is applied, for the first time, to evaluate the RF noise performance of submicron MOSFETs. Starting with an accurate representation of the structure and doping of devices from a 0.25 /spl mu/m CMOS technology, we present the behavior of the drain and gate power and correlation noise spectra, as a function of frequency and gate length. The simulations are shown to be in agreement with measured noise parameters.

Keywords

MOSFET; UHF field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 0.25 micron; CMOS technology; CMOSFET; RF noise performance; correlation noise spectra; gate length; impedance field method; noise parameters; physics-based RF noise modeling; submicron MOSFETs; CMOS technology; Circuit noise; Fluctuations; Impedance; MOSFETs; Microscopy; Noise generators; Radio frequency; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746282

Filename

746282