Title :
Physics-based RF noise modeling of submicron MOSFETs
Author :
Donati, S. ; Alam, M.A. ; Krisch, K.S. ; Martin, S. ; Pinto, M.R. ; Vuong, H.H. ; Bonani, F. ; Ghione, G.
Author_Institution :
Bell Lab., Lucent Technol, Murray Hill, NJ, USA
Abstract :
The Impedance Field Method (IFM) for physics-based noise modeling of electron devices is applied, for the first time, to evaluate the RF noise performance of submicron MOSFETs. Starting with an accurate representation of the structure and doping of devices from a 0.25 /spl mu/m CMOS technology, we present the behavior of the drain and gate power and correlation noise spectra, as a function of frequency and gate length. The simulations are shown to be in agreement with measured noise parameters.
Keywords :
MOSFET; UHF field effect transistors; microwave field effect transistors; semiconductor device models; semiconductor device noise; 0.25 micron; CMOS technology; CMOSFET; RF noise performance; correlation noise spectra; gate length; impedance field method; noise parameters; physics-based RF noise modeling; submicron MOSFETs; CMOS technology; Circuit noise; Fluctuations; Impedance; MOSFETs; Microscopy; Noise generators; Radio frequency; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746282
