A physically based model for low-frequency noise of poly-silicon resistors

Author

Brederlow, R. ; Weber, W. ; Dahl, C. ; Schmitt-Landsiedel, D. ; Thewes, R.

Author_Institution

Corp. Technol., Siemens AG, Munich, Germany

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

89

Lastpage

92

Abstract

In this work an analytical first principle model for the current noise of poly-Si layers is presented and compared with measured data. For these resistors frequently used in analog CMOS applications the observed noise is much higher than predicted by the models used in circuit simulation. For the first time, dependencies on specific processing parameters such as doping or deposition techniques are investigated and explained. Moreover, deviations in the noise behavior of small size resistors are described satisfactorily. Guidelines for analog circuit design and a model suitable for circuit simulation are presented.

Keywords

CMOS integrated circuits; elemental semiconductors; integrated circuit design; resistors; semiconductor device models; semiconductor device noise; silicon; LF noise; Si; analog CMOS applications; analog circuit design; circuit simulation; low-frequency noise; physically based model; poly-Si layers; polysilicon resistors; processing parameters; small size resistors; Analytical models; CMOS analog integrated circuits; Circuit noise; Circuit simulation; Current measurement; Low-frequency noise; Noise measurement; Resistors; Semiconductor device modeling; Semiconductor process modeling;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746286

Filename

746286