Title :
A physically based model for low-frequency noise of poly-silicon resistors
Author :
Brederlow, R. ; Weber, W. ; Dahl, C. ; Schmitt-Landsiedel, D. ; Thewes, R.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
In this work an analytical first principle model for the current noise of poly-Si layers is presented and compared with measured data. For these resistors frequently used in analog CMOS applications the observed noise is much higher than predicted by the models used in circuit simulation. For the first time, dependencies on specific processing parameters such as doping or deposition techniques are investigated and explained. Moreover, deviations in the noise behavior of small size resistors are described satisfactorily. Guidelines for analog circuit design and a model suitable for circuit simulation are presented.
Keywords :
CMOS integrated circuits; elemental semiconductors; integrated circuit design; resistors; semiconductor device models; semiconductor device noise; silicon; LF noise; Si; analog CMOS applications; analog circuit design; circuit simulation; low-frequency noise; physically based model; poly-Si layers; polysilicon resistors; processing parameters; small size resistors; Analytical models; CMOS analog integrated circuits; Circuit noise; Circuit simulation; Current measurement; Low-frequency noise; Noise measurement; Resistors; Semiconductor device modeling; Semiconductor process modeling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746286
