Influence of quantum confinement effects on single electron and single hole transistors

Influences of quantum confinement effects on the device characteristics of single electron and single hole transistors are studied using Si narrow channel MOSFETs with both p/sup +/ and n/sup +/ source/drain contacts. Numerical calculations of the energy spectrum in silicon quantum dots are also carried out to support the experimental results. The obtained results indicate the difficulty in predicting the peak positions of the Coulomb blockade oscillations due to the quantum confinement effects in nanoscale devices. For the application of SETs, a, new method to adjust the peak position by injecting charges into silicon nano-crystals or traps is proposed and demonstrated.