DocumentCode
2572545
Title
Explanation of stress-induced damage in thin oxides
Author
Bude, D.J. ; Weir, B.E. ; Silverman, P.J.
Author_Institution
Bell Lab., Lucent Technol., Murray Hill, NJ, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
179
Lastpage
182
Abstract
This work presents a physically-based model for anode hole injection which explains both the voltage polarity asymmetry and sub-threshold behavior of Fowler-Nordheim (FN) stress generated oxide damage down to low V/sub G/. Also, we have developed an n-well bias technique for PFETs which clearly establishes that this FN stress-induced damage is due to anode hole injection.
Keywords
MOSFET; hole density; insulating thin films; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; Fowler-Nordheim stress; PFETs; anode hole injection; n-well bias technique; oxide damage; physically-based model; stress-induced damage; sub-threshold behavior; thin oxides; voltage polarity asymmetry; Anodes; Charge carrier processes; Electric breakdown; Electron traps; Hot carriers; Integrated circuit modeling; Ionization; Positron emission tomography; Stress; Voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746313
Filename
746313
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