Considerations on the semiconducting properties of PZT 65/35 thin films

Author

Boerasu, I. ; Pintilie, L. ; Gomes, M.J.M. ; Perreira, M.

Author_Institution

Univ. of Minho, Braga, Portugal

Volume

2

fYear

2002

fDate

2002

Firstpage

419

Abstract

Electric properties of Au/PZT(65/35)/Pt MFM structures were investigated by measuring the D-E and C-V characteristics. Analysing experimental data, some important quantities were extracted (remnant polarisation; coercive field; acceptor concentration; Schottky barrier height). It was shown that in case of C-V measurements the PZT film behaves more like a semiconductor than a ferroelectric.

Keywords

Schottky barriers; capacitance; dielectric polarisation; ferroelectric semiconductors; ferroelectric thin films; gold; lead compounds; metal-semiconductor-metal structures; platinum; semiconductor thin films; Au-PZT-Pt; Au-PbZrO3TiO3-Pt; Au/PZT(65/35)/Pt MFM structures; C-V characteristics; D-E characteristics; PZT 65/35 thin films; PZT film; Schottky barrier height; acceptor concentration; coercive field; remanent polarisation; semiconducting properties; Capacitance-voltage characteristics; Data analysis; Data mining; Electric variables measurement; Gold; Magnetic force microscopy; Polarization; Schottky barriers; Semiconductivity; Semiconductor thin films;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Conference, 2002. CAS 2002 Proceedings. International

Print_ISBN

0-7803-7440-1

Type

conf

DOI

10.1109/SMICND.2002.1105882

Filename

1105882