DocumentCode
2572584
Title
Point contact conduction at the oxide breakdown of MOS devices
Author
Sune, J. ; Miranda, E. ; Nafria, M. ; Aymerich, X.
Author_Institution
Dept. d´Enginyeria Electron., Univ. Autonoma de Barcelona, Spain
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
191
Lastpage
194
Abstract
Experiment and simulation are combined to demonstrate that, provided that thermal effects are limited, the dielectric breakdown of SiO/sub 2/ films in MOS devices opens atomic-size conduction channels (with radius in the 1 to 10 nm range) which behave as point contacts. Depending on the size of the breakdown spot, the conduction properties are either those of a Sharvin point contact or those of a quantum point contact.
Keywords
MIS devices; point contacts; semiconductor device breakdown; MOS device; Sharvin point contact; SiO/sub 2/; dielectric breakdown; oxide film; point contact conduction; quantum point contact; Breakdown voltage; Capacitors; Contacts; Dielectric breakdown; Electric breakdown; Failure analysis; MOS devices; Stress measurement; Thermal conductivity; Thermal stresses;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746318
Filename
746318
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