W-band GaAs PIN diode SPST switch MMIC

Author

Hongtao, Wei ; Xuebang, Gao ; Wu Hongjiang ; Bihua, Wei ; Yanan, Lu

Author_Institution

Hebei Semicond. Res. Inst., Shijiazhuang, China

fYear

2012

fDate

19-21 Oct. 2012

Firstpage

93

Lastpage

95

Abstract

The design, fabrication, and experimental characteristics of GaAs PIN diodes are presented for W band monolithic integrated switches. The diodes with 20mm-diameter were used and showed a turn on voltage of 1.32 V, and a switching cutoff frequency of 4.0 THz. The monolithic integrated switches employed microstrip transmission lines and backside via holes for low-inductance signal grounding. A radial stub-based design was used for on-chip biasing, and the high-frequency characteristics of the switches were verified by on-wafer W-band testing. The SPST PIN monolithic switch demonstrated a low minimum insertion loss of 1.1 dB at 92 GHz and 30 dB isolation, 1.8 dB insertion loss in the frequency band from 85 GHz to 95 GHz.

Keywords

III-V semiconductors; MMIC; gallium arsenide; microstrip lines; microwave switches; p-i-n diodes; transmission lines; GaAs; SPST PEN monolithic switch; SPST switch MMIC; W band monolithic integrated switches; W-band GaAs PIN diode; frequency 85 GHz to 95 GHz; low-inductance signal grounding; microstrip transmission lines; on-chip biasing; on-wafer W-band testing; radial stub-based design; size 20 mm; voltage 1.32 V;

fLanguage

English

Publisher

ieee

Conference_Titel

Computational Problem-Solving (ICCP), 2012 International Conference on

Conference_Location

Leshan

Print_ISBN

978-1-4673-1696-5

Electronic_ISBN

978-1-4673-1695-8

Type

conf

DOI

10.1109/ICCPS.2012.6384329

Filename

6384329