Title :
30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates
Author :
Suemitsu, T. ; Ishii, T. ; Yokoyama, H. ; Umeda, Y. ; Enoki, T. ; Ishii, Y. ; Tamamura, T.
Author_Institution :
NTT Syst. Electron. Labs., Atsugi, Japan
Abstract :
In this paper, we report the fabrication and the device characteristics of the InP-based lattice-matched HEMTs with a 30-nm gate, which is the smallest gate yet achieved for InP-based HEMTs. A fullerene-incorporated nanocomposite resist is used in electron beam (EB) lithography to achieve such a small gate. A cutoff frequency of the 30-nm-gate HEMTs is 350 GHz, which is comparable to the reported value for 50-nm-gate InP-based pseudomorphic HEMTs and one of the highest value achieved by any kind of three-terminal electronic device.
Keywords :
III-V semiconductors; aluminium compounds; electron resists; gallium arsenide; high electron mobility transistors; indium compounds; 30 nm; 350 GHz; HEMTs; III-V semiconductors; InAlAs-InGaAs; cutoff frequency; device characteristics; electron beam lithography; fullerene-incorporated nanocomposite resist; lattice matching; three-terminal electronic device; Cutoff frequency; Electron beams; Fabrication; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; Lithography; MODFETs; Resists;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746339
