DocumentCode
2572750
Title
Improvement of DC, low frequency and reliability properties of InAlAs/InGaAs InP-based HEMTs by means of an InP etch stop layer
Author
Meneghesso, G. ; Buttari, D. ; Perin, E. ; Canali, C. ; Zanoni, E.
Author_Institution
Dipt. di Elettronica e Inf., Padova Univ., Italy
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
227
Lastpage
230
Abstract
In this paper we report on the elimination of the kink effect and of the hot-electron degradation in InP-based HEMTs which results from the insertion of an InP etch stop layer on top of the InAlAs donor layer. We attribute this improvement to the passivation, by means of InP, of deep levels on the surface of the InAlAs, as demonstrated by transconductance frequency dispersion measurements.
Keywords
III-V semiconductors; aluminium compounds; deep levels; gallium arsenide; high electron mobility transistors; hot carriers; indium compounds; passivation; semiconductor device reliability; HEMT; InAlAs-InGaAs; InP; deep levels; etch stop layer; hot-electron degradation; kink effect; passivation; reliability properties; transconductance frequency dispersion measurements; Degradation; Dispersion; Etching; Frequency; HEMTs; Indium compounds; Indium phosphide; MODFETs; Passivation; Transconductance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746341
Filename
746341
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