Integrated a-Si:H/pentacene inorganic/organic complementary circuits

Author

Bonse, M. ; Thomasson, D.B. ; Klauk, H. ; Gundlach, D.J. ; Jackson, T.N.

Author_Institution

Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

249

Lastpage

252

Abstract

We have developed a low-cost fabrication process for complementary circuits using integrated organic and inorganic thin film transistors (TFTs). In these circuits, a-Si:H TFTs are used as the n-channel and pentacene organic TFTs as the p-channel devices. These circuits show high switching gain and excellent logic level conservation, with very low off-currents during static operation. Gate delay of our circuits, measured using ring oscillators, is as low as 5 /spl mu/s, the fastest speed reported for circuits using organic transistors.

Keywords

CMOS logic circuits; amorphous semiconductors; delays; elemental semiconductors; low-power electronics; organic semiconductors; silicon; thin film transistors; Si:H; inorganic/organic complementary circuits; logic level conservation; low-cost fabrication process; n-channel devices; off-currents; organic TFTs; p-channel devices; ring oscillators; static operation; switching gain; thin film transistors; Delay; Fabrication; Integrated circuit measurements; Logic circuits; Logic devices; Pentacene; Ring oscillators; Switching circuits; Thin film transistors; Velocity measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746347

Filename

746347