Title :
Hydrogen plasma-enhanced crystallization of amorphous silicon for low-temperature polycrystalline silicon TFT´s
Author :
Pangal, K. ; Sturm, J.C. ; Wagner, S.
Author_Institution :
Dept. of Electr. Eng., Princeton Univ., NJ, USA
Abstract :
It has recently been discovered that a room temperature hydrogen plasma could reduce the crystallization time at 600/spl deg/C of hydrogenated amorphous silicon films by a factor of five to a reasonable four hours. Further, the process can be spatially controlled by masking with a patterned oxide. In this abstract, we report for the first time the successful application of this method to an all low-temperature (/spl les/600/spl deg/C) TFT fabrication process. Good performance with mobility of 40-35 cm/sup 2//Vs and an ON/OFF ratio of 4/spl times/10/sup 5/ has been achieved with a crystallization time of only four hours.
Keywords :
carrier mobility; crystallisation; elemental semiconductors; plasma materials processing; silicon; thin film transistors; 600 C; H/sub 2/; ON/OFF ratio; Si; amorphous silicon film; crystallization; fabrication; hydrogen plasma treatment; low temperature polycrystalline silicon TFT; mobility; Amorphous silicon; Crystallization; Grain size; Hydrogen; Plasma applications; Plasma chemistry; Plasma materials processing; Plasma properties; Plasma temperature; Surface treatment;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746350
