Title :
Ka-band 2-watt power GaAs MMIC
Author :
Arai, S. ; Yoshida, T. ; Kai, K. ; Takatsuka, S. ; Oda, Y. ; Yanagawa, S.
Author_Institution :
Toshiba Corp., Kawasaki, Japan
Abstract :
A high-power Ka-band power GaAs MMIC (monolithic microwave integrated circuit) has been developed using the distributed-element impedance transforming technique. The MMIC has an on-chip matching circuit comprising a power divider and combiner. At 30 GHz, an output power of 2 W with a 3.3-dB gain and a saturation output power of 3 W have been obtained from a 9.6-mm-gate-width power GaAs FET MMIC.<>
Keywords :
III-V semiconductors; MMIC; field effect integrated circuits; gallium arsenide; impedance matching; power integrated circuits; 2 to 3 W; 3.3 dB; 30 GHz; 9.6 mm; FET; GaAs; Ka-band; distributed-element impedance transforming technique; monolithic microwave integrated circuit; on-chip matching circuit; Circuits; Electrodes; FETs; Field effect MMICs; Fingers; Gain; Gallium arsenide; Impedance; Power dividers; Power generation;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38915
