DocumentCode
2573166
Title
Cost-effective cleaning for advanced Si-processing
Author
Heyns, M.M. ; Bearda, T. ; Cornelissen, I. ; De Gendt, S. ; Knotter, D.M. ; Loewenstein, L.M. ; Lux, M. ; Mertens, P.W. ; Mertens, S. ; Meuris, M. ; Schaekers, M. ; Snee, P. ; Teerlinck, I. ; Vos, R.
Author_Institution
IMEC, Leuven, Belgium
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
325
Lastpage
328
Abstract
The effect of various metal contaminants on the thin gate oxide integrity is investigated and a classification is made according to their final position in the structure. A simplified cleaning strategy is presented which is highly performant and at the same time cost-effective and has less environmental impact than the traditional cleaning sequences. Finally, a novel environmentally friendly ozone/DI-water process for the removal of photoresist and organic post-etch residues is proposed.
Keywords
elemental semiconductors; environmental factors; silicon; surface cleaning; surface contamination; Si; cleaning; environmental impact; gate oxide; metal contaminant; organic post-etch residue; ozone/DI-water process; photoresist; silicon processing; Atomic measurements; Chromium; Contamination; Green cleaning; Oxidation; Pollution measurement; Silicon; Spinning; Strontium; Zinc;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746365
Filename
746365
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