Author :
Heyns, M.M. ; Bearda, T. ; Cornelissen, I. ; De Gendt, S. ; Knotter, D.M. ; Loewenstein, L.M. ; Lux, M. ; Mertens, P.W. ; Mertens, S. ; Meuris, M. ; Schaekers, M. ; Snee, P. ; Teerlinck, I. ; Vos, R.
Abstract :
The effect of various metal contaminants on the thin gate oxide integrity is investigated and a classification is made according to their final position in the structure. A simplified cleaning strategy is presented which is highly performant and at the same time cost-effective and has less environmental impact than the traditional cleaning sequences. Finally, a novel environmentally friendly ozone/DI-water process for the removal of photoresist and organic post-etch residues is proposed.
Keywords :
elemental semiconductors; environmental factors; silicon; surface cleaning; surface contamination; Si; cleaning; environmental impact; gate oxide; metal contaminant; organic post-etch residue; ozone/DI-water process; photoresist; silicon processing; Atomic measurements; Chromium; Contamination; Green cleaning; Oxidation; Pollution measurement; Silicon; Spinning; Strontium; Zinc;
