Physical and chemical analytical instruments far failure analyses in Gbit devices

Author

Mitsui, Y. ; Yano, F. ; Nakamura, Y. ; Kimoto, K. ; Hasegawa, T. ; Kimura, S. ; Asayama, K.

Author_Institution

Semicond. & IC Div., Hitachi Ltd., Tokyo, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

329

Lastpage

332

Abstract

The current status and future trend of analytical instruments are discussed. Analytical instruments for failure analyses in sub-1/4 micron dimensions or less, require high spatial resolution and sensitivity at atomic levels. Using new analytical instruments, such as the nano-prober for electrical characteristics inspection in actual circuits, TEM-EELS for chemical bond analysis of nanometer area and GDS for precise composition analysis, it was found that a SiO/sub 2/ or TiO/sub x/ film formed by water from titanic acid (TiO/sub x/H/sub 2/O) produced with titan, water and chlorine, was a cause of high resistivity for a contact (CVD-W/CVD=TiN/Ti/Si) in sub-1/4 micron devices.

Keywords

ULSI; digital integrated circuits; failure analysis; glow discharges; inspection; integrated circuit interconnections; integrated circuit testing; transmission electron microscopy; 0.25 micron; GDS; SiO/sub 2/; TEM-EELS; TiO/sub 2/; analytical instruments; composition analysis; electrical characteristics inspection; failure analyses; glow discharge spectrometer; nanometer area; resistivity; sensitivity; spatial resolution; titanic acid; Bonding; Chemical analysis; Circuits; Electric variables; Failure analysis; Inspection; Instruments; Nanoscale devices; Spatial resolution; Water;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746366

Filename

746366