Title :
Scalability of SOI technology into 0.13 /spl mu/m 1.2 V CMOS generation
Author :
Leobandung, E. ; Sherony, M. ; Sleight, J. ; Bolam, R. ; Assaderaghi, F. ; Wu, S. ; Schepis, D. ; Ajmera, A. ; Rausch, W. ; Davari, B. ; Shahidi, G.
Author_Institution :
IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
Abstract :
The scalability of SOI CMOS technology into the low voltage high performance regime and its comparison with bulk CMOS technology is presented. Based on ring oscillator performance, the 0.13 /spl mu/m SOI CMOS technology can achieve more than 25% faster speed and/or 50% less active power compared to a similar bulk technology.
Keywords :
CMOS integrated circuits; integrated circuit technology; silicon-on-insulator; 0.13 micron; 1.2 V; SOI CMOS technology; Si; low voltage high performance regime; ring oscillator performance; scalability; sub-quarter micron CMOS generation; CMOS technology; Implants; Nitrogen; Power supplies; Scalability; Stress; Temperature; Threshold voltage; Virtual manufacturing;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746384
