DocumentCode
2573447
Title
Scalability of SOI technology into 0.13 /spl mu/m 1.2 V CMOS generation
Author
Leobandung, E. ; Sherony, M. ; Sleight, J. ; Bolam, R. ; Assaderaghi, F. ; Wu, S. ; Schepis, D. ; Ajmera, A. ; Rausch, W. ; Davari, B. ; Shahidi, G.
Author_Institution
IBM Semicond. Res. & Dev. Center, Hopewell Junction, NY, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
403
Lastpage
406
Abstract
The scalability of SOI CMOS technology into the low voltage high performance regime and its comparison with bulk CMOS technology is presented. Based on ring oscillator performance, the 0.13 /spl mu/m SOI CMOS technology can achieve more than 25% faster speed and/or 50% less active power compared to a similar bulk technology.
Keywords
CMOS integrated circuits; integrated circuit technology; silicon-on-insulator; 0.13 micron; 1.2 V; SOI CMOS technology; Si; low voltage high performance regime; ring oscillator performance; scalability; sub-quarter micron CMOS generation; CMOS technology; Implants; Nitrogen; Power supplies; Scalability; Stress; Temperature; Threshold voltage; Virtual manufacturing;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746384
Filename
746384
Link To Document