Transistors and tunnel diodes for analog/mixed-signal circuits and embedded memory

Author

Seabaugh, A. ; Deng, X. ; Blake, T. ; Brar, B. ; Broekaert, T. ; Lake, R. ; Morris, F. ; Frazier, G.

Author_Institution

Raytheon Syst. Co., Dallas, TX, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

429

Lastpage

432

Abstract

An integrated tunnel diode/transistor process can be used to increase the speed of signal processing circuitry or reduce power at the same speed; in memory applications, tunnel diodes can be used to reduce static power dissipation (>20X in Si, >1000X in III-V materials) relative to conventional approaches. This paper summarizes recent progress in InP and Si-based tunnel diodes and circuits.

Keywords

analogue integrated circuits; indium compounds; integrated circuit technology; integrated memory circuits; mixed analogue-digital integrated circuits; silicon; tunnel diodes; CMOS/tunnel diode circuits; InP; InP-based devices; RTD/HEMT technology; Si; Si-based devices; analog circuits; embedded memory; integrated tunnel diode/transistor process; memory applications; mixed-signal circuits; signal processing circuitry; static power dissipation reduction; tunnel diodes; CMOS technology; Clocks; HEMTs; Indium phosphide; Integrated circuit technology; Large scale integration; Molecular beam epitaxial growth; Resonant tunneling devices; Schottky diodes; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746390

Filename

746390