Title :
A resonant terahertz detector utilizing a high electron mobility transistor
Author :
Jian-Qiang Lu ; Shur, M.S. ; Hesler, J.L. ; Liangquan Sun ; Weikle, R., II
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
Abstract :
We report on the implementation of a terahertz detector utilizing two-dimensional electronic fluid in a high electron mobility transistor. The device response is compared with the predictions of the hydrodynamic theory of electronic fluid. The results indicate the viscosity of electronic fluid might be larger than estimated previously. We also report on the unusual polarization dependence of the detector response.
Keywords :
high electron mobility transistors; infrared detectors; two-dimensional electron gas; device response; high electron mobility transistor; hydrodynamic theory; polarization dependence; resonant terahertz detector; two-dimensional electronic fluid; viscosity; Electromagnetic radiation; Electrons; Frequency; HEMTs; Infrared detectors; MODFETs; Polarization; Radiation detectors; Resonance; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746396