DocumentCode :
2573648
Title :
A resonant terahertz detector utilizing a high electron mobility transistor
Author :
Jian-Qiang Lu ; Shur, M.S. ; Hesler, J.L. ; Liangquan Sun ; Weikle, R., II
Author_Institution :
Dept. of Electr. Comput. & Syst. Eng., Rensselaer Polytech. Inst., Troy, NY, USA
fYear :
1998
fDate :
6-9 Dec. 1998
Firstpage :
453
Lastpage :
456
Abstract :
We report on the implementation of a terahertz detector utilizing two-dimensional electronic fluid in a high electron mobility transistor. The device response is compared with the predictions of the hydrodynamic theory of electronic fluid. The results indicate the viscosity of electronic fluid might be larger than estimated previously. We also report on the unusual polarization dependence of the detector response.
Keywords :
high electron mobility transistors; infrared detectors; two-dimensional electron gas; device response; high electron mobility transistor; hydrodynamic theory; polarization dependence; resonant terahertz detector; two-dimensional electronic fluid; viscosity; Electromagnetic radiation; Electrons; Frequency; HEMTs; Infrared detectors; MODFETs; Polarization; Radiation detectors; Resonance; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
ISSN :
0163-1918
Print_ISBN :
0-7803-4774-9
Type :
conf
DOI :
10.1109/IEDM.1998.746396
Filename :
746396
Link To Document :
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