DocumentCode
2573745
Title
Broadband high-efficiency MMIC power amplifiers using ion-implanted MESFET technology
Author
Shih, Y.C. ; Tan, K. ; Kasel, K. ; Yu, K.K. ; Wang, S.K.
Author_Institution
Hughes Aircraft Co., Torrance, CA, USA
fYear
1989
fDate
13-15 June 1989
Firstpage
1119
Abstract
Broadband, high-efficiency MMIC (monolithic microwave integrated circuit) amplifiers have been designed and fabricated using an ion-implanted MESFET technology. In the 7.5- to 18-GHz bandwidth, the amplifier has demonstrated a power-added efficiency of 15 to 34%, averaging greater than 20%. The output power is about 24 dBm at 1-dB compression and 26 dBm at 2-dB compression.<>
Keywords
MMIC; Schottky gate field effect transistors; field effect integrated circuits; ion implantation; microwave amplifiers; power amplifiers; wideband amplifiers; 15 to 34 percent; 7.5 to 18 GHz; MMIC power amplifiers; broadband type; high-efficiency; ion-implanted MESFET technology; monolithic microwave integrated circuit; power-added efficiency; Broadband amplifiers; High power amplifiers; Integrated circuit technology; MESFET integrated circuits; MMICs; Microwave amplifiers; Microwave integrated circuits; Microwave technology; Monolithic integrated circuits; Power amplifiers;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location
Long Beach, CA, USA
Type
conf
DOI
10.1109/MWSYM.1989.38919
Filename
38919
Link To Document