In-plane sensitive vertical trench-Hall device

A novel vertical trench-Hall device sensitive to components of the magnetic induction parallel to the chip surface is reported. It is fabricated by trench-etching followed by a set of CMOS steps. The device exhibits a sensitivity of 250 V/AT, a linearity error below 0.1% for inductions up to 0.3 T, and a cross-sensitivity below 0.2% over the full circle. The fabrication technology enables co-integration of sensor and front-end circuitry on the same chip electrically insulated. Additionally, the sensor bears the potential for dynamic offset compensation by means of spinning current. Therefore, the implementation of an accurate and inexpensive 2D-magnetic-sensor system in CMOS technology is straightforward.