Title :
Experiments and modeling of boron segregation to {311} defects and initial rapid enhanced boron diffusion induced by self-implantation in Si
Author :
Saito, T. ; Xia, J. ; Kim, R. ; Aoki, T. ; Kobayashi, H. ; Kamakura, Y. ; Taniguchi, K.
Author_Institution :
Dept. of Electron. & Inf. Syst., Osaka Univ., Japan
Abstract :
Boron segregation and transient enhanced diffusion (TED) of boron atoms during annealing were investigated under two types of wafers implanted with Si ions. We found the following facts: (1) boron segregation to {311} defects has been observed at low temperature annealing. (2) {311} defects were formed in the area where the self-interstitial concentration exceeds 3/spl times/10/sup 17/ cm/sup -3/. (3) Free self-interstitials in the region beyond the implanted range causes initial rapid enhanced diffusion prior to the onset of normal TED.
Keywords :
MIS devices; annealing; boron; diffusion; doping profiles; elemental semiconductors; ion implantation; segregation; silicon; MOS devices; Si:B,Si; doping profiles; low temperature annealing; rapid enhanced diffusion; segregation; self-interstitial concentration; transient enhanced diffusion; Annealing; Boron; Electronic mail; Impurities; Information systems; Ion implantation; MOS devices; Silicon; Temperature control; Temperature distribution;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746406
