Title :
A calibrated model for trapping of implanted dopants at material interface during thermal annealing
Author :
Yong-Seog Oh ; Ward, D.E.
Author_Institution :
Avant! Corp., Freemont, CA, USA
Abstract :
An enhanced version of Lau´s model for trapping of dopants at material interfaces has been implemented in the process simulator TSUPREM-4. The model includes interactions among dopant species and diffusion along material interfaces. It has been calibrated for phosphorus, boron, and arsenic and shows good agreement with SIMS data and with NMOS and PMOS device characteristics.
Keywords :
annealing; diffusion; ion implantation; semiconductor doping; semiconductor process modelling; NMOS device; PMOS device; SIMS; Si:As; Si:B; Si:P; TSUPREM-4; diffusion; dopant trapping; ion implantation; material interface; model calibration; process simulation; thermal annealing; Boron; Doping profiles; Equations; Implants; MOS devices; Oxidation; Semiconductor process modeling; Silicon; Simulated annealing; Steady-state;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746409
