Title :
Application of a new circuit design oriented Q extraction technique to inductors in silicon ICs
Author :
Tong Chen ; Kihong Kim ; O, K.
Author_Institution :
Dept. of Electr. & Comput. Eng., Florida Univ., Gainesville, FL, USA
Abstract :
Using a circuit design oriented Q extraction technique based on bandwidth (Q/sub bw/), Q factors of a wide range of inductor structures are studied and compared to Q factors extracted using the conventional technique (Q/sub conv/=-Im(y/sub 11/)/Re(y/sub 11/)). This new technique corrects the under-estimation problem of the Q/sub conv/ at moderate to high frequencies. Use of Q/sub conv/ can result erroneous conclusions leading to improper inductor optimization. To make the difference between Q/sub conv/ and Q/sub bw/ lower than 10% for all the examined inductors, the |W~/sub m/|/|W~/sub e/| (average magnetic energy/average electrical energy) ratio computed using the extracted inductor model parameters should be greater than /spl sim/20.
Keywords :
Q-factor; elemental semiconductors; inductors; integrated circuit design; silicon; Q-factor; Si; bandwidth; circuit design; inductor; model; optimization; parameter extraction; silicon IC; Application specific integrated circuits; Bandwidth; Capacitors; Circuit synthesis; Frequency estimation; Inductors; Multilevel systems; Q factor; Resonant frequency; Silicon;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746413