Title :
A novel buried oxide isolation for monolithic RF inductors on silicon
Author :
Erzgraber, H.B. ; Grabolla, T. ; Richter, H.H. ; Schley, P. ; Wolff, A.
Author_Institution :
Inst. for Semicond. Phys., Frankfurt, Germany
Abstract :
We present a new approach to realizing high quality factor (Q) inductors using CMOS-compatible process steps only. The method is based on the preparation of very thick buried oxide regions beneath the inductors to reduce parasitics. The behavior of inductors fabricated with a CMOS compatible, 3-level metal silicon technology conforms well with simulations.
Keywords :
CMOS integrated circuits; Q-factor; buried layers; elemental semiconductors; inductors; isolation technology; silicon; CMOS technology; Si; buried oxide isolation; monolithic RF inductor; parasitics; quality factor; silicon substrate; CMOS technology; Coils; Costs; Dielectric substrates; Inductors; Plasma measurements; Q factor; Radio frequency; Silicon; Spirals;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746415
