Title :
On-chip spiral inductors with diffused shields using channel-stop implant
Author :
Yoshitomi, T. ; Sugawara, Y. ; Morifuji, E. ; Ohguro, T. ; Kimijima, H. ; Morimoto, T. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan
Abstract :
We investigated the Diffused shield Under the Oxide (DUO) for the first time. DUO is an extremely shallow diffusion layer in the n-well under the field oxide. DUO can be formed by high energy implantation through the field oxide, and it can be formed by the process of the channel stop implant for MOSFETs simultaneously. Application of DUO provided a 79% improvement in Q-factor and the comparable shield effect on the n-well. This structure is one of the suitable ground shield for the spiral inductor of the rf CMOS.
Keywords :
CMOS integrated circuits; Q-factor; diffusion; electromagnetic shielding; inductors; ion implantation; DUO; MOSFET; Q-factor; RF CMOS IC; channel-stop implant; diffused shield under the oxide; field oxide; ground shield; n-well; on-chip spiral inductor; shallow diffusion layer; CMOS process; Fabrication; Inductors; Laboratories; MOSFETs; Microelectronic implants; Q factor; Spirals; Substrates; System-on-a-chip;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746416
