On-chip spiral inductors with diffused shields using channel-stop implant

Author

Yoshitomi, T. ; Sugawara, Y. ; Morifuji, E. ; Ohguro, T. ; Kimijima, H. ; Morimoto, T. ; Momose, H.S. ; Katsumata, Y. ; Iwai, H.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Kawasaki, Japan

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

540

Lastpage

543

Abstract

We investigated the Diffused shield Under the Oxide (DUO) for the first time. DUO is an extremely shallow diffusion layer in the n-well under the field oxide. DUO can be formed by high energy implantation through the field oxide, and it can be formed by the process of the channel stop implant for MOSFETs simultaneously. Application of DUO provided a 79% improvement in Q-factor and the comparable shield effect on the n-well. This structure is one of the suitable ground shield for the spiral inductor of the rf CMOS.

Keywords

CMOS integrated circuits; Q-factor; diffusion; electromagnetic shielding; inductors; ion implantation; DUO; MOSFET; Q-factor; RF CMOS IC; channel-stop implant; diffused shield under the oxide; field oxide; ground shield; n-well; on-chip spiral inductor; shallow diffusion layer; CMOS process; Fabrication; Inductors; Laboratories; MOSFETs; Microelectronic implants; Q factor; Spirals; Substrates; System-on-a-chip;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746416

Filename

746416