Title :
A new evaluation method of plasma process-induced Si substrate damage by the voltage shift under constant current injection at metal/Si interface
Author :
Egashira, K. ; Eriguchi, K. ; Hashimoto, S.
Author_Institution :
ULSI Process Technol. Dev. Center, Matushita Electron. Corp., Kyoto, Japan
Abstract :
We propose a new evaluation method of plasma process induced Si substrate damage, which utilizes the voltage shift under constant-current injection (VSCCI) at metal-Si interface. This method is applied to the plasma damaged Si substrate and the obtained depth profile of the defects in the Si correlates well with the electrical metal/Si contact property.
Keywords :
ULSI; elemental semiconductors; integrated circuit measurement; integrated circuit reliability; semiconductor-metal boundaries; silicon; sputter etching; IC reliability; Si; VSCCI; constant current injection; depth profile; metal/semiconductor interface; plasma etching; plasma process-induced substrate damage; voltage shift; Bellows; Contacts; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma measurements; Plasma properties; Plasma temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746421
