• DocumentCode
    2574119
  • Title

    Direct detecting of dynamic floating-body effects in SOI circuits by backside electron beam testing

  • Author

    Yoshida, E. ; Koyama, T. ; Maeda, S. ; Yamaguchi, Y. ; Komori, J. ; Mashiko, Y.

  • Author_Institution
    ULSI Dev. Center, Mitsubishi Electr. Corp., Itami, Japan
  • fYear
    1998
  • fDate
    6-9 Dec. 1998
  • Firstpage
    567
  • Lastpage
    570
  • Abstract
    It is demonstrated that the dynamic floating-body effects in SOI circuits can be detected directly by backside electron beam (EB) testing. Using the present technique, we have determined the actual body potential waveform during dynamic operation and confirmed that 0.35/spl mu/m field-shield SOI CMOS devices provide stable-operation while keeping such merits of SOI as quicker switching.
  • Keywords
    CMOS integrated circuits; electron beam testing; integrated circuit testing; low-power electronics; silicon-on-insulator; 0.35 micron; SOI circuits; backside electron beam testing; body potential waveform; dynamic floating-body effects; field-shield SOI CMOS devices; switching speed; Circuit testing; Clocks; Electron beams; Inverters; Logic testing; MOSFET circuits; Silicon; Spatial resolution; Ultra large scale integration; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
  • Conference_Location
    San Francisco, CA, USA
  • ISSN
    0163-1918
  • Print_ISBN
    0-7803-4774-9
  • Type

    conf

  • DOI
    10.1109/IEDM.1998.746422
  • Filename
    746422
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=2574119