Title :
Remote charge scattering in MOSFETs with ultra-thin gate dielectrics
Author :
Krishnan, M.S. ; Yee Chia Yeo ; Qiang Lu ; Tsu-Jae King ; Bokor, J. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
In this work, we have studied the mobility degradation of inversion charge due to remote charge scattering (RCS), referring to scattering of mobile charges in the inversion layer by charged impurities present in the gate material of a MOSFET. The results indicate a 20-30% reduction in the electron mobility because of RCS, for gate oxide thicknesses lower than 15 /spl Aring/.
Keywords :
MOSFET; dielectric thin films; electron mobility; inversion layers; leakage currents; semiconductor device reliability; 15 angstrom; MOSFETs; charged impurities; electron mobility; gate oxide thicknesses; inversion charge; inversion layer; mobility degradation; remote charge scattering; ultra-thin gate dielectrics; Degradation; Dielectrics; Electron mobility; Impurities; MOSFETs; Mobile computing; Particle scattering; Permittivity; Poisson equations; Quantization;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746423
