Experimental signature and physical mechanisms of substrate enhanced gate current in MOS devices

Author

Esseni, D. ; Selmi, L.

Author_Institution

Dipt. di Elettronica Inf. e Sistemistica, Bologna Univ., Italy

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

579

Lastpage

582

Abstract

This paper examines in detail the phenomenon of Substrate Enhanced Electron Injection (SEEI). By using floating gate devices less aggressively scaled than the MOSFETs of Bude (1995) we are able to: (1) develop criteria to separate SEEI from the coexisting channel hot electron (CHE) injection; (2) point out a direct proportionality between the gate (I/sub G/) and the substrate (I/sub B/) currents that provides a signature of SEEI; (3) reconcile SEEI with reported mechanisms of optical minority carrier generation in the substrate.

Keywords

MOSFET; electric current; hot carriers; minority carriers; semiconductor device measurement; MOS devices; MOSFET; channel hot electron injection; floating gate devices; optical minority carrier generation; physical mechanisms; substrate currents; substrate enhanced gate current; Channel hot electron injection; DC generators; Electron optics; MOS devices; MOSFETs; Nonvolatile memory; Optical devices; Substrate hot electron injection; Transistors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746425

Filename

746425