DocumentCode
2574215
Title
Sub-5 nm multiple-thickness gate oxide technology using oxygen implantation
Author
Ya-Chin King ; Kuo, C. ; Tsu-Jae King ; Chenming Hu
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
585
Lastpage
588
Abstract
A novel and simple method of growing oxides of multiple thicknesses using oxygen implant in sub-5 nm gate oxide technologies is presented. Results show that multiple thicknesses on the same wafer can be achieved with good interface and bulk properties of the oxide. Oxygen implant produces oxides with better Q/sub BD/ characteristics than the nitrogen-implanted oxides.
Keywords
CMOS integrated circuits; carrier mobility; dielectric thin films; integrated circuit reliability; integrated circuit technology; ion implantation; semiconductor device breakdown; 5 nm; CMOS technology; O; O implantation; SiO/sub 2/-Si; breakdown characteristics; multiple-thickness gate oxide technology; Annealing; Current measurement; Frequency measurement; Implants; Logic circuits; Nitrogen; Oxidation; Oxygen; Thickness measurement; Tunneling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746426
Filename
746426
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