Title :
Impact of nitridation engineering on microscopic SILC characteristics of sub-10-nm tunnel dielectrics
Author :
Ogata, T. ; Inoue, M. ; Nakamura, T. ; Tsuji, N. ; Kobayashi, K. ; Kawase, K. ; Kurokawa, H. ; Kaneoka, T. ; Ohno, Y. ; Miyoshi, H.
Author_Institution :
ULSI Dev. Center, Mitsubishi Electr. Corp., Itami, Japan
Abstract :
We have statistically analyzed 28800 cells of arrayed stacked gate transistors, and, for the first time, we discuss the effectiveness of NO and N/sub 2/O nitridation in suppressing microscopic SILC (mSILC). We have found that NO nitridation is more effective in suppressing the mSILC than N/sub 2/O nitridation and is very promising for the reduction of bit failures.
Keywords :
MOSFET; dielectric thin films; leakage currents; nitridation; tunnelling; N/sub 2/O; NO; arrayed stacked gate transistors; bit failure; microscopic SILC; nitridation; stress induced leakage current; tunnel dielectric; Charge carrier processes; Dielectric films; Dielectric measurements; Dielectric substrates; Electron traps; Gases; Leakage current; MOS capacitors; Microscopy; Stress;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746429
