• DocumentCode
    25744
  • Title

    Modified single-carrier multilevel sinusoidal pulse width modulation for asymmetrical insulated gate bipolar transistor-clamped grid-connected inverter

  • Author

    Fengjiang Wu ; Jiandong Duan ; Fan Feng

  • Author_Institution
    Dept. of Electr. Eng., Harbin Inst. of Technol., Harbin, China
  • Volume
    8
  • Issue
    8
  • fYear
    2015
  • fDate
    8 2015
  • Firstpage
    1531
  • Lastpage
    1541
  • Abstract
    Conventional sinusoidal pulse width modulation (SPWM) for single-phase asymmetrical seven-level insulated gate bipolar transistor (IGBT)-clamped grid-connected inverter (IC-GCI) needs an additional logic operation circuit and a dead zone generation circuit, which raises cost and complicates the implementation. In addition, both added circuitries decrease the reliability. In this study, a modified single-carrier multilevel SPWM (MSCM-SPWM) scheme suitable for IC-GCI is proposed. By setting one carrier, three digital signals to identify voltage zones and six equivalent modulation waves, the control signals of the switches in IC-GCI can be generated with only one digital signal processor controller and simple logic operation. It makes the implementation of the multilevel GCI easier. The detailed spectral character of the MSCM-SPWM is originally derived based on double-Fourier integral theory and then compared with the conventional scheme. It proves that they own the similar spectral character. Detailed simulation and experimental results verify the accuracy and feasibility of the MSCM-SPWM and the single-phase IC-GCI.
  • Keywords
    Fourier transforms; PWM invertors; digital signal processing chips; insulated gate bipolar transistors; power grids; power transistors; switching convertors; transistor circuits; IGBT-clamped grid-connected inverter; MSCM-SPWM scheme; asymmetrical insulated gate bipolar transistor; control signals; dead zone generation circuit; digital signal processor controller; double-Fourier integral theory; equivalent modulation waves; logic operation circuit; modified single-carrier multilevel sinusoidal pulse width modulation scheme; multilevel GCI; single-phase IC-GCI; voltage zones;
  • fLanguage
    English
  • Journal_Title
    Power Electronics, IET
  • Publisher
    iet
  • ISSN
    1755-4535
  • Type

    jour

  • DOI
    10.1049/iet-pel.2014.0519
  • Filename
    7166526