Breakdown and low-temperature anomalous effects in 6H SiC JFETs

Author

Meneghesso, G. ; Bartolini, A. ; Verzellesi, G. ; Cavallini, A. ; Castaldini, A. ; Canali, C. ; Zanoni, E.

Author_Institution

Dipt. di Elettronica e Inf., Padova Univ., Italy

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

695

Lastpage

698

Abstract

The aim of this work is to describe experimental results concerning on-state weak ionization effects, off-state gate-drain breakdown phenomena and low-temperature electrical anomalies in buried-gate 6H SiC JFETs. We demonstrate that surface traps and deep impurity levels can give rise to anomalous phenomena such as I/sub D/-V/sub DS/ kinks in the drain current, dispersion of transconductance and negative thermal coefficient of breakdown voltage.

Keywords

deep levels; electron traps; impact ionisation; junction gate field effect transistors; semiconductor device breakdown; semiconductor device measurement; semiconductor device reliability; semiconductor materials; silicon compounds; wide band gap semiconductors; SiC; buried-gate JFETs; deep impurity levels; drain current; low-temperature anomalous effects; negative thermal coefficient; off-state gate-drain breakdown phenomena; on-state weak ionization effects; surface traps; transconductance; Doping; Electric breakdown; Epitaxial growth; Ionization; JFETs; Nitrogen; Semiconductor impurities; Silicon carbide; Temperature; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746452

Filename

746452