Si/SiGe:C heterojunction bipolar transistors in an epi-free well, single-polysilicon technology

Author

Knoll, D. ; Heinemann, B. ; Osten, H.J. ; Ehwald, B. ; Tillack, Bernd ; Schley, P. ; Barth, R. ; Matthes, M. ; Kwang Soo Park ; Young Kim ; Winkler, W.

Author_Institution

Inst. for Semicond. Phys., Frankfurt, Germany

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

703

Lastpage

706

Abstract

We describe the high-frequency and DC performance of HBTs with LPCVD-grown epitaxial SiGe:C base layers. The devices were fabricated in an epi-free well, single-polysilicon technology. The HBTs show peak f/sub T/ (f/sub MAX/) values up to 65 (90) GHz, and ring oscillator delays down to 16ps. Excellent static parameters like (I/sub B/-driven) Early voltage-current gain products of >20000 V are also demonstrated.

Keywords

CVD coatings; Ge-Si alloys; carbon; heterojunction bipolar transistors; semiconductor epitaxial layers; semiconductor materials; 16 ps; 65 GHz; 90 GHz; DC characteristics; Early voltage-current gain product; LPCVD epitaxial base layer; Si-SiGe:C; Si/SiGe:C heterojunction bipolar transistor; epi-free well single-polysilicon technology; high-frequency characteristics; ring oscillator delay; CMOS process; Costs; Delay; Doping; Germanium silicon alloys; Heterojunction bipolar transistors; Implants; Ring oscillators; Silicon germanium; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746454

Filename

746454