Transconductance enhancement in deep submicron strained Si n-MOSFETs

Author

Rim, K. ; Hoyt, J.L. ; Gibbons, J.F.

Author_Institution

Solid State Photonics Lab., Stanford Univ., CA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

707

Lastpage

710

Abstract

We report the first measurements on deep submicron strained-Si n-MOSFETs. In spite of the high channel doping and vertical effective fields, electron mobility is enhanced by /spl sim/75% compared to typical MOSFET mobilities. The extrinsic transconductance is increased by /spl sim/45% for channel lengths of 0.1 /spl mu/m, when AC measurements are used to reduce self-heating effects. The improved transconductance demonstrates the use of strain-induced enhancements in both mobility and high-field transport to increase the average electron velocity, while maintaining the channel doping required to suppress short channel effects.

Keywords

MOSFET; electron mobility; elemental semiconductors; silicon; AC measurement; Si; channel doping; deep submicron strained Si n-MOSFET; electron mobility; electron velocity; high field transport; self-heating; short channel effect; transconductance; vertical effective field; Boron; Dielectric substrates; Doping profiles; Electron mobility; Fabrication; MOSFET circuits; Raman scattering; Rapid thermal processing; Strain control; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746455

Filename

746455