Optimization guidelines for epitaxial collectors of advanced BJT´s with improved breakdown voltage and speed

Author

Palestri, P. ; Fiegna, C. ; Selmi, L. ; Hurkx, G.A.M. ; Slotboom, J.W. ; Sangiorgi, E.

Author_Institution

DIEGM, Udine, Italy

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

741

Lastpage

744

Abstract

In this paper the effects of highly non-uniform collector doping profiles on the speed and breakdown performance of silicon bipolar transistors are investigated by means of Monte Carlo and drift diffusion simulations. The results point out that a thin highly-doped collector layer adjacent to the base can improve the speed of the intrinsic device without a significant reduction of breakdown voltage. Guidelines for choosing the target doping level and layer thickness are provided.

Keywords

Monte Carlo methods; bipolar transistors; doping profiles; semiconductor device breakdown; semiconductor device models; semiconductor epitaxial layers; BJT; Monte Carlo simulation; Si; breakdown voltage; doping profile; drift diffusion simulation; epitaxial collector; optimization; silicon bipolar transistor; speed; Bipolar transistors; Delay estimation; Doping profiles; Electric breakdown; Guidelines; Heating; Laboratories; Monte Carlo methods; Silicon; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746463

Filename

746463