Title :
Explanation and quantitative model for the matching behaviour of poly-silicon resistors
Author :
Thewes, R. ; Brederlow, R. ; Dahl, C. ; Kollmer, U. ; Linnenbank, C.G. ; Holzapfl, B. ; Becker, J. ; Kissing, J. ; Kessel, S. ; Weber, W.
Author_Institution :
Corp. Technol., Siemens AG, Munich, Germany
Abstract :
We investigate the matching behaviour of poly-silicon resistors. Experimental results from an analog CMOS process with three poly-silicon options are discussed and compared with a quantitative model which is developed using fit parameter-free analytical calculations and Monte-Carlo simulations. It is found that mismatch is directly proportional to the grain size. A relation is derived that allows us to optimize devices for low mismatch circuit applications.
Keywords :
CMOS analogue integrated circuits; Monte Carlo methods; elemental semiconductors; grain size; integrated circuit modelling; resistors; silicon; Monte-Carlo simulations; Si; analog CMOS process; device optimization; fit parameter-free analytical calculations; grain size; low mismatch circuit applications; matching behaviour; polysilicon resistors; quantitative model; CMOS process; Circuit testing; Decoding; Electrical resistance measurement; Grain boundaries; Grain size; Resistors; Semiconductor device modeling; Temperature; Voltage;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746470
