Title :
Integration processes of (Ba,Sr)TiO/sub 3/ capacitor for 1 Gb and beyond [DRAMs]
Author :
Byoung Taek Lee ; Cha Young Yoo ; Han Jin Lim ; Chang Seok Kang ; Hong Bae Park ; Wan Don Kim ; Suk Ho Ju ; Horii, H. ; Ki Hoon Lee ; Hyun Woo Kim ; Sang In Lee ; Moon Young Lee
Author_Institution :
Semicond. R&D Center, Samsung Electron. Co. Ltd., Kyungki-Do, South Korea
Abstract :
A new two-step post-annealing process to prevent degradation of integrated BST capacitors was developed. By this process, the increment of capacitance and the reduction of leakage current were obtained without barrier oxidation. A concave-type capacitor structure with buried barrier using Pt electrodes and MOCVD BST films was demonstrated in order to solve the integration problems such as Pt etching and the contact between the BST and the barrier. The electrical properties of MOCVD BST capacitor in 3-dimensional structure were investigated.
Keywords :
DRAM chips; MOCVD; barium compounds; capacitors; dielectric thin films; leakage currents; strontium compounds; (BaSr)TiO/sub 3/; 1 Gbit; DRAMs; MOCVD films; buried barrier; concave-type capacitor structure; etching; integrated capacitor degradation; leakage current; three-dimensional structure; two-step post-annealing process; Binary search trees; Capacitance; Capacitors; Contacts; Degradation; Electrodes; Etching; Leakage current; MOCVD; Oxidation;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746480
