Title :
Sputtering process design of PZT capacitors for stable FeRAM operation
Author :
Inoue, N. ; Takeuchi, T. ; Hayashi, Y.
Author_Institution :
ULSI Res. Lab., NEC Corp., Sagamihara, Japan
Abstract :
PZT capacitors of Zr/Ti=0.35/0.65 show wide operational margin in FeRAM devices, due to the low coercive voltage and the low dielectric constant. The sputtering of top electrodes, Ir/IrO/sub 2/, in high O/sub 2/ pressure and at low temperature avoids damage to the PZT surface. Optimization of the composition and sputtering conditions for the top electrodes achieved a highly reliable capacitor for FeRAM.
Keywords :
ferroelectric capacitors; ferroelectric storage; lead compounds; permittivity; random-access storage; sputter deposition; zirconium compounds; FeRAM operation; PZT; PZT capacitors; PbZrO3TiO3; coercive voltage; dielectric constant; operational margin; reliable capacitor; sputtering conditions; sputtering process design; top electrodes; Capacitors; Dielectric constant; Electrodes; Ferroelectric films; Low voltage; Nonvolatile memory; Process design; Random access memory; Sputtering; Zirconium;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746481
