DocumentCode
2575229
Title
Advanced interconnect scheme analysis: real impact of technological improvements
Author
Lecarval, G. ; Morand, Y. ; Roger, F. ; Rivallin, P. ; Poncet, D.
Author_Institution
CEA, Centre d´Etudes Nucleaires de Grenoble, France
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
837
Lastpage
840
Abstract
We analyse advanced scenarios for 0.13 /spl mu/m interconnect technology. This exhaustive study of all critical parameters, including process dispersion, is based on design of experiment and systematic simulation of delay and crosstalk. The simultaneous reductions of both parasitic effects are incompatible. The limited impact of technological evolutions will involve design solutions to significantly improve crosstalk.
Keywords
crosstalk; delays; design of experiments; integrated circuit design; integrated circuit interconnections; advanced interconnect scheme analysis; crosstalk; delay; design of experiment; design solutions; parasitic effects; process dispersion; technological improvements; Aluminum; Capacitors; Copper; Crosstalk; Delay; Dielectrics; Electrical resistance measurement; Predictive models; Silicon compounds; Space technology;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746485
Filename
746485
Link To Document