Title :
Advanced interconnect scheme analysis: real impact of technological improvements
Author :
Lecarval, G. ; Morand, Y. ; Roger, F. ; Rivallin, P. ; Poncet, D.
Author_Institution :
CEA, Centre d´Etudes Nucleaires de Grenoble, France
Abstract :
We analyse advanced scenarios for 0.13 /spl mu/m interconnect technology. This exhaustive study of all critical parameters, including process dispersion, is based on design of experiment and systematic simulation of delay and crosstalk. The simultaneous reductions of both parasitic effects are incompatible. The limited impact of technological evolutions will involve design solutions to significantly improve crosstalk.
Keywords :
crosstalk; delays; design of experiments; integrated circuit design; integrated circuit interconnections; advanced interconnect scheme analysis; crosstalk; delay; design of experiment; design solutions; parasitic effects; process dispersion; technological improvements; Aluminum; Capacitors; Copper; Crosstalk; Delay; Dielectrics; Electrical resistance measurement; Predictive models; Silicon compounds; Space technology;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746485
