Title :
Novel co-sputtered fluorinated amorphous carbon films for sub-0.25 /spl mu/m low /spl kappa/ damascene multilevel interconnect applications
Author :
Zhu, W. ; Pai, C.S. ; Bair, H.E. ; Krautter, H.W. ; Opila, R.L. ; Dennis, B.S. ; Pinczuk, A. ; Chabal, Y.J. ; Grundmeier, G. ; Graebner, J.E. ; Cheung, K.P. ; Schilling, F.C. ; Case, C.B. ; Liu, R. ; Jin, S.
Author_Institution :
Bell Labs., Lucent Technol., Murray Hill, NJ, USA
Abstract :
Fluorinated amorphous carbon (a-C:F) films were deposited by magnetron sputtering, and the preparation-structure-property relationship was investigated in detail to assess the potential of a-C:F to be used for low /spl kappa/ damascene multilevel interconnect applications. It was found that for the low /spl kappa/ a-C:F films to be thermally stable, the films need to have a carbon structure with an optimal amount of crosslinked, tetrahedrally bonded (sp/sup 3/ diamond bonding) carbon atoms. This dictates that the F/C atomic ratio for these films is in a range of 35-45%, and the films contain no hydrogen. We have deposited robust a-C:F films with proper carbon bonding configurations which has /spl kappa/<2.8 and with material properties meeting stringent requirements for device integration.
Keywords :
amorphous state; carbon; dielectric thin films; fluorine; integrated circuit interconnections; permittivity; sputtered coatings; 0.25 micron; C:F; bonding; damascene multilevel interconnect; dielectric constant; fluorinated amorphous carbon film; interlayer dielectric; magnetron co-sputtering; structure; thermal stability; Amorphous materials; Atomic layer deposition; Bonding; Diamond-like carbon; Dielectric breakdown; Dielectric constant; Dielectric materials; Hydrogen; Sputtering; Thermal stability;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746487
