Title :
Microwave characteristics of GaAs MMIC integrable optical detectors
Author :
Claspy, P.C. ; Hill, S.M. ; Bhasin, K.B.
Author_Institution :
NASA Lewis Res. Center, Cleveland, OH, USA
Abstract :
The high-frequency characteristics of interdigitated photoconductive detectors fabricated on a HEMT (high-electron-mobility transistor) structure are presented. The fabrication process was completely compatible with that used to fabricate MODFETs (modulation-doped FETs), making these detectors easily integrable for MMIC (monolithic microwave integrated circuit) usage. The operating wavelength chosen was 820 nm. Detector responsivity as high as 2.5 A/W and an external quantum efficiency of 3.81% were measured. Response speed was nearly independent of electrode geometry, and all detectors had usable response at frequencies to 6 GHz. A change from inductive to capacitive reactance with bias suggests the possibility of a zero-reactance operating point. A small-signal model of the detector based on microwave measurements is also developed.<>
Keywords :
III-V semiconductors; MMIC; gallium arsenide; high electron mobility transistors; integrated optoelectronics; optical interconnections; photoconducting devices; photodetectors; 3.81 percent; 6 GHz; 820 nm; GaAs; HEMT structure; HF interconnects; III-V semiconductors; MMIC; MODFETs; external quantum efficiency; fabrication process; high-electron-mobility transistor; high-frequency characteristics; integrable optical detectors; integrated optoelectronics; interdigitated photoconductive detectors; modulation-doped FETs; monolithic microwave integrated circuit; small-signal model; zero-reactance operating point; Epitaxial layers; FETs; Gallium arsenide; HEMTs; MMICs; MODFET circuits; MODFET integrated circuits; Optical detectors; Optical device fabrication; Photoconductivity;
Conference_Titel :
Microwave Symposium Digest, 1989., IEEE MTT-S International
Conference_Location :
Long Beach, CA, USA
DOI :
10.1109/MWSYM.1989.38930
