DocumentCode
2575384
Title
Thermal, self-heating and kink effects in a-Si:H thin film transistors
Author
Iniguez, B. ; Wang, L. ; Fjeldly, T.A. ; Shur, M.S. ; Slade, H.
Author_Institution
ECSE, Rensselaer Polytech. Inst., Troy, NY, USA
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
879
Lastpage
882
Abstract
We report on self-heating, thermal and kink effects in a-Si TFTs. These effects become crucial for gate lengths of 4 microns and shorter. Our data show that self-heating effects in TFTs might reduce the highest operating temperature for AMLC displays by up to 30 to 40/spl deg/C for a 4 /spl mu/m gate device and even more for shorter devices.
Keywords
amorphous semiconductors; driver circuits; elemental semiconductors; equivalent circuits; heat losses; hydrogen; liquid crystal displays; semiconductor device models; silicon; thin film transistors; tunnelling; 4 micron; AMLCD; DC characteristics; Si:H; a-Si:H TFT; equivalent thermal circuit; floating body effect; kink effects; operating temperature; self-heating effects; short channel effects; thermal effects; tunnelling; unified charge model concept; Analytical models; Circuits; Glass; Heat transfer; MOSFETs; Temperature dependence; Temperature sensors; Thermal conductivity; Thin film transistors; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746495
Filename
746495
Link To Document