Title :
A new model of tunnelling current and SILC in ultra-thin oxides
Author :
Larcher, L. ; Paccagnella, A. ; Scarpa, A. ; Ghidini, G.
Author_Institution :
Dipt. di Elettronica e Inf., Padova Univ., Italy
Abstract :
We propose a new double-box model of the oxide conduction band of MOS devices, aiming to quantitatively predict the gate current across ultra-thin oxides. Simulations nicely fit the experimental quantum oscillations of the gate current in the Fowler-Nordheim tunnelling regime. The oscillation period of the gate current has been empirically correlated with the oxide thickness. The low-field stress induced leakage current can be fitted by our model as well, by inserting oxide traps mediating an inelastic trap-assisted tunnelling.
Keywords :
CMOS integrated circuits; MOS capacitors; insulating thin films; integrated circuit modelling; integrated circuit reliability; leakage currents; semiconductor device models; tunnelling; Fowler-Nordheim tunnelling regime; MOS devices; SILC; double-box model; gate current; inelastic trap-assisted tunnelling; oscillation period; oxide conduction band; oxide traps; quantum oscillations; stress induced leakage current; tunnelling current; ultra-thin oxides; CMOS technology; Cathodes; Electrons; Leakage current; MOS devices; Microelectronics; Predictive models; Semiconductor device modeling; Stress; Tunneling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746500
