Monte Carlo simulation of stress-induced leakage current by hopping conduction via multi-traps in oxide

For the first time a new simulation method applicable to a stress-induced leakage current (SILC) by successive hopping conduction via multi-traps is presented. This method describes the electron hopping process and trap distribution microscopically. A rate-limiting process of hopping conduction is found to be an electrode-to-trap tunneling, which causes large electric field and temperature dependences of the current.