Title :
A 31 GHz f/sub max/ lateral BJT on SOI using self-aligned external base formation technology
Author :
Shino, T. ; Inoh, K. ; Yamada, T. ; Nii, H. ; Kawanaka, S. ; Fuse, T. ; Yoshimi, M. ; Katsumata, Y. ; Watanabe, S. ; Matsunaga, J.
Author_Institution :
Adv. Semicond. Devices Res. Labs., Toshiba Corp., Kawasaki, Japan
Abstract :
A novel device structure and simple process technology for realizing low-power/high-performance SOI lateral BJTs are presented. Low base resistance has been achieved by employing a self-aligned external base formation process. Due to reduced parasitics, the fabricated device exhibited an f/sub max/ of 31 GHz, the highest value for an SOI BJT reported so far.
Keywords :
UHF bipolar transistors; diffusion; microwave bipolar transistors; silicon-on-insulator; 31 GHz; SOI; base resistance; lateral BJT; parasitics; process technology; self-aligned external base formation; Boron; Etching; Frequency; Fuses; Implants; Laboratories; Noise measurement; Resists; Semiconductor devices; Silicon compounds;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746512
