DocumentCode
2575670
Title
Record power added efficiency of bipolar power transistors for low voltage wireless applications
Author
van Rijs, F. ; Visser, H.A. ; Magnee, P.H.C.
Author_Institution
Philips Res. Lab., Eindhoven, Netherlands
fYear
1998
fDate
6-9 Dec. 1998
Firstpage
957
Lastpage
960
Abstract
To increase the power added efficiency (PAE) of low voltage RF bipolar power transistors for cellular applications, we investigated the influence of transistor parasitics on PAE. We found that reducing the output capacitance increases the PAE due to better second harmonic tuning. By optimizing the transistor for a low output capacitance we achieved a record PAE of 71% at 0.5 Watt, 1.8 GHz and 3.5 V supply voltage.
Keywords
UHF bipolar transistors; capacitance; cellular radio; low-power electronics; power bipolar transistors; tuning; 0.5 W; 1.8 GHz; 3.5 V; 71 percent; bipolar power transistors; cellular applications; low voltage wireless applications; output capacitance; power added efficiency; second harmonic tuning; transistor parasitics; Bipolar transistors; Breakdown voltage; Electrical resistance measurement; Low voltage; Parasitic capacitance; Power amplifiers; Power generation; Power measurement; Power transistors; Solid modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location
San Francisco, CA, USA
ISSN
0163-1918
Print_ISBN
0-7803-4774-9
Type
conf
DOI
10.1109/IEDM.1998.746513
Filename
746513
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