Title :
An effective gate resistance model for CMOS RF and noise modeling
Author :
Xiaodong Jin ; Jia-Jiunn Ou ; Chih-Hung Chen ; Weidong Liu ; Deen, M.J. ; Gray, P.R. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
A physics-based effective gate resistance model representing the non-quasi-static (NQS) effect and the distributed gate electrode resistance is proposed for accurately predicting the RF performance of CMOS devices. The accuracy of the model is validated with 2D simulations and experimental data. In addition, the effect of the gate resistance on the device noise behavior has been studied with measured data. The result shows that an accurate gate resistance model is essential for the noise modeling.
Keywords :
CMOS integrated circuits; UHF integrated circuits; field effect MMIC; integrated circuit modelling; integrated circuit noise; CMOS; RF applications; distributed gate electrode resistance; gate resistance model; noise behavior; noise modeling; nonquasistatic effect; CMOS technology; Circuits; Electric resistance; Electrical resistance measurement; Electrodes; Predictive models; Radio frequency; Roentgenium; Semiconductor device modeling; Solid modeling;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746514
