Title :
SOI MOSFET on low cost SPIMOX substrate
Author :
Iyer, S.S.K. ; Xiang Lu ; Cheung, N.W. ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Separation by plasma implantation of oxygen (SPIMOX) is a low-cost, high-throughput process for fabricating silicon on insulator (SOI) substrates. MOSFETs are fabricated on SPIMOX substrates and their characteristics are reported for the first time. The transistor characteristics and effective electron mobility of the silicon layer are compared to that in commercial separation by implantation of oxygen (SIMOX) wafers. The effect of the back gate on the channel, which is unique to SOI, is observed. The gate oxides and surface roughness of SPIMOX wafers are also studied.
Keywords :
MOSFET; SIMOX; electron mobility; ion implantation; surface topography; SOI MOSFET; SPIMOX substrate; back gate; effective electron mobility; gate oxides; high-throughput process; plasma implantation; surface roughness; transistor characteristics; Acceleration; Annealing; Costs; Fabrication; MOSFET circuits; Plasma accelerators; Plasma immersion ion implantation; Plasma sheaths; Silicon on insulator technology; Throughput;
Conference_Titel :
Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International
Conference_Location :
San Francisco, CA, USA
Print_ISBN :
0-7803-4774-9
DOI :
10.1109/IEDM.1998.746523
