SOI MOSFET on low cost SPIMOX substrate

Author

Iyer, S.S.K. ; Xiang Lu ; Cheung, N.W. ; Chenming Hu

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA

fYear

1998

fDate

6-9 Dec. 1998

Firstpage

1001

Lastpage

1004

Abstract

Separation by plasma implantation of oxygen (SPIMOX) is a low-cost, high-throughput process for fabricating silicon on insulator (SOI) substrates. MOSFETs are fabricated on SPIMOX substrates and their characteristics are reported for the first time. The transistor characteristics and effective electron mobility of the silicon layer are compared to that in commercial separation by implantation of oxygen (SIMOX) wafers. The effect of the back gate on the channel, which is unique to SOI, is observed. The gate oxides and surface roughness of SPIMOX wafers are also studied.

Keywords

MOSFET; SIMOX; electron mobility; ion implantation; surface topography; SOI MOSFET; SPIMOX substrate; back gate; effective electron mobility; gate oxides; high-throughput process; plasma implantation; surface roughness; transistor characteristics; Acceleration; Annealing; Costs; Fabrication; MOSFET circuits; Plasma accelerators; Plasma immersion ion implantation; Plasma sheaths; Silicon on insulator technology; Throughput;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting, 1998. IEDM '98. Technical Digest., International

Conference_Location

San Francisco, CA, USA

ISSN

0163-1918

Print_ISBN

0-7803-4774-9

Type

conf

DOI

10.1109/IEDM.1998.746523

Filename

746523